18
2 Basic Principles of LED
19. R. Mirhosseini, M.F. Schubert, S. Chhajed et al., Improved color rendering and luminous
efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active
regions. Opt. Express 17(3), 10806–10813 (2009)
20. K. Wu, T.B. Wei, D. Lan, et al., Phosphor-free nanopyramid white light-emitting diodes
grown on {10-11} planes using nanospherical-lens photolithography. Appl. Phys. Lett. 103(24),
241107 (2013)
21. S. Albert, A. Bengoechea-Encabo, M.A. Sanchez-Garcia, et al., Selective area growth and
characterization of InGaN nanocolumns for phosphor-free white light emission. J. Appl. Phys.
13(11), 114306 (2013)
22. H.P.T. Nguyen, Q. Wang, Z.T. Mi, Phosphor-free InGaN/GaN dot-in-a-wire white lightemitting diodes on copper substrates. J. Electron. Mater. 43(4), 868–872 (2014)
2 Basic Principles of LED
19. R. Mirhosseini, M.F. Schubert, S. Chhajed et al., Improved color rendering and luminous
efficacy in phosphor-converted white light-emitting diodes by use of dual-blue emitting active
regions. Opt. Express 17(3), 10806–10813 (2009)
20. K. Wu, T.B. Wei, D. Lan, et al., Phosphor-free nanopyramid white light-emitting diodes
grown on {10-11} planes using nanospherical-lens photolithography. Appl. Phys. Lett. 103(24),
241107 (2013)
21. S. Albert, A. Bengoechea-Encabo, M.A. Sanchez-Garcia, et al., Selective area growth and
characterization of InGaN nanocolumns for phosphor-free white light emission. J. Appl. Phys.
13(11), 114306 (2013)
22. H.P.T. Nguyen, Q. Wang, Z.T. Mi, Phosphor-free InGaN/GaN dot-in-a-wire white lightemitting diodes on copper substrates. J. Electron. Mater. 43(4), 868–872 (2014)