Chapter 12
Novel Nitride LED Technology
At present, the light efficiency of the high-power white LED has reached 250 lm/W in
the industry. The light efficiency reported in the laboratory has exceeded 300 lm/W.
The innovation of LED technology and application of LEDs have far exceeded
expectations. However, the luminous efficiency of the traditional planar LED with
InGaN/GaN multiple quantum well structure is difficult to rise significantly due to
some inherent problems. At the same time, the light efficiency is still far away from
the theoretical limit of 400 lm/W. In addition, with the demand of some special applications, some new LED technologies such as nanorod LEDs, quantum dot LEDs,
polarized LEDs, etc., have been explored. The exploration of the growth, preparation and application of these new LED structures not only contribute to the research
of basic physics but also to solve the bottleneck problem in the development of
semiconductor lighting by improving the material and device performance and by
approaching the theoretical limit of LED lighting. Thus, it has important research
value.
12.1 GaN-Based Nanorod LED
The research on GaN nanorods began in the late 1990s. The initial work utilizes
MBE to grow different morphologies of GaN nanorods. In 2004, Kim of Dongguk
University in Korea first developed the nanorod LED by MOCVD method, which
officially opened the research of nanorod LED, and has become a research topic in
recent years.
© Science Press and Springer Nature Singapore Pte Ltd. 2020
J. Li et al., III-Nitrides Light Emitting Diodes: Technology and Applications,
Springer Series in Materials Science 306,
https://doi.org/10.1007/978-981-15-7949-3_12
253
Novel Nitride LED Technology
At present, the light efficiency of the high-power white LED has reached 250 lm/W in
the industry. The light efficiency reported in the laboratory has exceeded 300 lm/W.
The innovation of LED technology and application of LEDs have far exceeded
expectations. However, the luminous efficiency of the traditional planar LED with
InGaN/GaN multiple quantum well structure is difficult to rise significantly due to
some inherent problems. At the same time, the light efficiency is still far away from
the theoretical limit of 400 lm/W. In addition, with the demand of some special applications, some new LED technologies such as nanorod LEDs, quantum dot LEDs,
polarized LEDs, etc., have been explored. The exploration of the growth, preparation and application of these new LED structures not only contribute to the research
of basic physics but also to solve the bottleneck problem in the development of
semiconductor lighting by improving the material and device performance and by
approaching the theoretical limit of LED lighting. Thus, it has important research
value.
12.1 GaN-Based Nanorod LED
The research on GaN nanorods began in the late 1990s. The initial work utilizes
MBE to grow different morphologies of GaN nanorods. In 2004, Kim of Dongguk
University in Korea first developed the nanorod LED by MOCVD method, which
officially opened the research of nanorod LED, and has become a research topic in
recent years.
© Science Press and Springer Nature Singapore Pte Ltd. 2020
J. Li et al., III-Nitrides Light Emitting Diodes: Technology and Applications,
Springer Series in Materials Science 306,
https://doi.org/10.1007/978-981-15-7949-3_12
253