References
227
References
1. M. Meneghini, A. Tazzoli, G. Mura et al., A review on the physical mechanisms that limit the
reliability of GaN-based LEDs. IEEE Trans. Electron Devices 57, 108–118 (2010)
2. L. Zhao, E. Thrush, C. Humphreys et al., Degradation of GaN-based quantum well lightemitting diodes. J. Appl. Phys. 103, 024501 (2008)
3. R. Xie, N. Nirosaki, K. Sakuma et al., White light-emitting diodes (LEDs) using (oxy)nitride
phosphors. J. Phys. D Appl. Phys. 41, 144013 (2008)
4. H.W. Jang, J.K. Kim, S.Y. Kim et al., Ohmic contacts for high power LEDs. Phys. Status Solidi
A Appl. Mater. Sci. 201(12), 2831–2836 (2004)
5. R. Dugnani, M. Wu, Fracture mechanisms for silicon dice, in Proceedings of the 35th ISTFA
(2009), pp. 309–313.
6. G. Meneghesso, S. Levada, R. Plerobonet al., Degradation mechanisms of GaN-based LEDs
after accelerated DC current aging, in IEEE International Electron Devices Meeting (2002),
pp. 103–106.
7. K. Mizuishi, H. Kurano, H. Sato et al., Degradation mechanisms of GaAs MESFETs. IEEE
Trans. Electron Devices ED-26, 1008–1014 (1979).
8. J. Arnold, DFR solutions (2004)
9. H. Kim, H. Yang, C. Huh, S. Kim et al., Electromigration-induced failure of GaN multi-quantum
well light emitting diode. Electron Lett. 36, 908–910 (2000)
10. K. Kohler, T. Stephan, A. Perona et al., Control of the Mg doping profile in III-N light-emitting
diodes and its effect on the electroluminescence efficiency. J. Appl. Phys. 97, 1049141–1049144
(2005)
11. DL Barton, M Osinski, P Perlin et al., Life tests and failure mechanisms of GaN/AlGaN/InGaN
light emitting diodes, in IEEE 35th Annual Proceedings of Reliability Physics Symposium
(1997), pp. 276–281
12. E. Meissner, M. Haeckel, J. Friedrich, A Practical Example of GaN-LED Failure Cause Analysis
by Application of Combined Electron Microscopy Techniques. Materials (Basel) 10(10), 1202
(2017)
13. F. Oldervoll, F. Strisland, Wire-bond failure mechanisms in plastic encapsulated microcircuits
and ceramic hybrids at high temperatures. Microelectron. Reliab. 44, 1009–1015 (2004)
14. P. Jacob, A. Kunz, G. Nicoletti, Reliability and wearout characterisation of LEDs. Microelectron. Reliab. 46, 1711–1714 (2006)
15. S.J. Chang, C.H. Chen, Y.K. Su et al., Improved ESD protection by combining InGaN-GaN
MQW LEDs with GaN schottky diodes. IEEE Electron Device Lett. 24, 129–131 (2003)
16. D. O’Mahony, W. Zimmerman, S. Steffen et al., Free-Standing gallium nitride Schottky diode
characteristics and stability in a high-temperature environment. Semicond. Sci. Technol. 24(12),
1–8 (2009)
17. Y. Su, S. Chang, S. Wei et al., ESD engineering of nitride-based LEDs. IEEE Trans. Device
Mater. Reliab. 5, 277–281 (2005)
18. G. Meneghesso, M. Meneghini, E. Zanoni, Recent results on the degradation of white LEDs
for lighting. J. Phys. D Appl. Phys. 43, 354007 (2010)
19. W. Driel, G. Wisse, Influence of material combinations on delamination failures in a cavitydown TBGA package. IEEE Trans. Compon. Packag. Technol. 27, 651–658 (2004)
20. D. Jia, W. Jia, Y. Jia, Long persistent alkali-earth silicate phosphors doped with Eu 2 +, Nd 3 +.
J. Appl. Phys. 101, 023520 (2007)
21. B. Dierre, R. Xie, N. Hirosaki et al., Blue emission of Ce 3 + in lanthanide silicon oxy-nitride
phosphors. J. Mater. Res. 22, 1933–1941 (2007)
22. L. Zhou, B. An, Y. Wu et al., Analysis of delamination and darkening in high power LED
packaging, IEEE International Symposium on the Physics and Failure Analysis of Integrated
Circuits (2009), pp. 656–660
23. S. Tarashioon, An Introduction to Driver Reliability (Springer, 2013), pp. 207–230
24. S. Koh, SSL System Reliability TNO report (2014)
227
References
1. M. Meneghini, A. Tazzoli, G. Mura et al., A review on the physical mechanisms that limit the
reliability of GaN-based LEDs. IEEE Trans. Electron Devices 57, 108–118 (2010)
2. L. Zhao, E. Thrush, C. Humphreys et al., Degradation of GaN-based quantum well lightemitting diodes. J. Appl. Phys. 103, 024501 (2008)
3. R. Xie, N. Nirosaki, K. Sakuma et al., White light-emitting diodes (LEDs) using (oxy)nitride
phosphors. J. Phys. D Appl. Phys. 41, 144013 (2008)
4. H.W. Jang, J.K. Kim, S.Y. Kim et al., Ohmic contacts for high power LEDs. Phys. Status Solidi
A Appl. Mater. Sci. 201(12), 2831–2836 (2004)
5. R. Dugnani, M. Wu, Fracture mechanisms for silicon dice, in Proceedings of the 35th ISTFA
(2009), pp. 309–313.
6. G. Meneghesso, S. Levada, R. Plerobonet al., Degradation mechanisms of GaN-based LEDs
after accelerated DC current aging, in IEEE International Electron Devices Meeting (2002),
pp. 103–106.
7. K. Mizuishi, H. Kurano, H. Sato et al., Degradation mechanisms of GaAs MESFETs. IEEE
Trans. Electron Devices ED-26, 1008–1014 (1979).
8. J. Arnold, DFR solutions (2004)
9. H. Kim, H. Yang, C. Huh, S. Kim et al., Electromigration-induced failure of GaN multi-quantum
well light emitting diode. Electron Lett. 36, 908–910 (2000)
10. K. Kohler, T. Stephan, A. Perona et al., Control of the Mg doping profile in III-N light-emitting
diodes and its effect on the electroluminescence efficiency. J. Appl. Phys. 97, 1049141–1049144
(2005)
11. DL Barton, M Osinski, P Perlin et al., Life tests and failure mechanisms of GaN/AlGaN/InGaN
light emitting diodes, in IEEE 35th Annual Proceedings of Reliability Physics Symposium
(1997), pp. 276–281
12. E. Meissner, M. Haeckel, J. Friedrich, A Practical Example of GaN-LED Failure Cause Analysis
by Application of Combined Electron Microscopy Techniques. Materials (Basel) 10(10), 1202
(2017)
13. F. Oldervoll, F. Strisland, Wire-bond failure mechanisms in plastic encapsulated microcircuits
and ceramic hybrids at high temperatures. Microelectron. Reliab. 44, 1009–1015 (2004)
14. P. Jacob, A. Kunz, G. Nicoletti, Reliability and wearout characterisation of LEDs. Microelectron. Reliab. 46, 1711–1714 (2006)
15. S.J. Chang, C.H. Chen, Y.K. Su et al., Improved ESD protection by combining InGaN-GaN
MQW LEDs with GaN schottky diodes. IEEE Electron Device Lett. 24, 129–131 (2003)
16. D. O’Mahony, W. Zimmerman, S. Steffen et al., Free-Standing gallium nitride Schottky diode
characteristics and stability in a high-temperature environment. Semicond. Sci. Technol. 24(12),
1–8 (2009)
17. Y. Su, S. Chang, S. Wei et al., ESD engineering of nitride-based LEDs. IEEE Trans. Device
Mater. Reliab. 5, 277–281 (2005)
18. G. Meneghesso, M. Meneghini, E. Zanoni, Recent results on the degradation of white LEDs
for lighting. J. Phys. D Appl. Phys. 43, 354007 (2010)
19. W. Driel, G. Wisse, Influence of material combinations on delamination failures in a cavitydown TBGA package. IEEE Trans. Compon. Packag. Technol. 27, 651–658 (2004)
20. D. Jia, W. Jia, Y. Jia, Long persistent alkali-earth silicate phosphors doped with Eu 2 +, Nd 3 +.
J. Appl. Phys. 101, 023520 (2007)
21. B. Dierre, R. Xie, N. Hirosaki et al., Blue emission of Ce 3 + in lanthanide silicon oxy-nitride
phosphors. J. Mater. Res. 22, 1933–1941 (2007)
22. L. Zhou, B. An, Y. Wu et al., Analysis of delamination and darkening in high power LED
packaging, IEEE International Symposium on the Physics and Failure Analysis of Integrated
Circuits (2009), pp. 656–660
23. S. Tarashioon, An Introduction to Driver Reliability (Springer, 2013), pp. 207–230
24. S. Koh, SSL System Reliability TNO report (2014)