References
5
References
1. N. Holonyak, S.F. Bevacqua, Coherent (visible) light emission from Ga (As 1-X P x ) junctions.
Appl. Phys. Lett. 1, 82–83 (1962)
2. Craford MG, Dupuis RD, Feng M, et al. 50th anniversary of the Light-Emitting Diode (LED):
an ultimate lamp, in Proceedings of the IEEE (2013)
3. D. Normile, Physicists change the light bulb. Science 346, 149–150 (2014)
4. F.A. Ponce, D.P. Bour, Nitride-based semiconductors for blue and green light-emitting devices.
Nature 386, 351–359 (1997)
5. T. Paskova, D.A. Hanser, K.R. Evans, GaN substrates for III-nitride sevices. Proc. IEEE 98,
1324–1338 (2010)
6. K. Sardar, C.N.R. Rao, New solvothermal routes for GaN nanocrystals. Adv. Mater. 16, 425
(2004)
7. S. Nakamura, The roles of structural imperfections in InGaN-Based blue light-emitting diodes
and laser diodes. Science 281, 956–961 (1998)
8. H. Masui, S. Nakamura, S.P. Den Baars et al., Nonpolar and semipolar III-nitride light-emitting
diodes: achievements and challenges. IEEE Trans. Electron Devices 57(1), 88–100 (2010)
9. J. Jang, S. Woo, D. Min, O. Nam, Recent advances in nonpolar and semipolar InGaN lightemitting diodes (LEDs). J. Nanosci. Nanotechnol. 15, 1895–1906 (2015)
10. M.H. Crawford, LED for solid-state lighting: performance challenges and recent advances.
IEEE J. Selected Topics Quantum Electron. 15, 1028–1040 (2009)
11. T.W. Yeh, Y.T. Lin, L. Stewart, et al, InGaN/GaN multiple quantum wells grown on nonpolar
facets of vertical GaN nanorod arrays. Nano Lett. 12(6), 3257–3262 (2012)
12. J.H. Park, D.Y. Kim, S.Y. Hwang, et al, Enhanced overall efficiency of GaInN-based
light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN
superlattice electronic blocking layer. Appl. Phys. Lett. 103(6), 061104 (2013)
13. J.O. Song, J.S. Ha, T.Y. Seong, Ohmic-contact technology for GaN-based light-emitting diodes:
role of p-type contact. IEEE Trans. Electron Devices 57(1), 42–59 (2010)
14. F. Bonaccorso, Z. Sun, T. Hasan et al., Graphene photonics and optoelectronics. Nat. Photonics
4(9), 611–622 (2010)
15. J.J. Wierer, A. David, M.M. Megens, III-nitride photonic-crystal light-emitting diodes with
high extraction efficiency. Nat. Photonics 3, 163–169 (2009)
16. M.K. Kwon, J.Y. Kim, B.Y. Kim, et al., Surface-plasmon-enhanced light-emitting diodes. Adv.
Mater. 20(7), 1253 (2008)
17. A.I. Zhmakin AI. Enhancement of light extraction from light emitting diodes. Phys. Rep. Rev.
Sect. Phys. Lett. 498, 189–241 (2011)
18. O. Ueda On degradation studies of III-V compound semiconductor optical devices over three
decades: focusing on gradual degradation. Jpn. J. Appl. Phys. 49(9), 090001 (2010)
19. M. Chang, D. Das, P. Varde, et al., Light emitting diodes reliability review. Microelectr. Reliabil.
52, 762–782 (2012)
20. E.F. Schubert, J.K. Kim, Solid-state light sources get smart. Science 308, 1274–1278 (2005)
5
References
1. N. Holonyak, S.F. Bevacqua, Coherent (visible) light emission from Ga (As 1-X P x ) junctions.
Appl. Phys. Lett. 1, 82–83 (1962)
2. Craford MG, Dupuis RD, Feng M, et al. 50th anniversary of the Light-Emitting Diode (LED):
an ultimate lamp, in Proceedings of the IEEE (2013)
3. D. Normile, Physicists change the light bulb. Science 346, 149–150 (2014)
4. F.A. Ponce, D.P. Bour, Nitride-based semiconductors for blue and green light-emitting devices.
Nature 386, 351–359 (1997)
5. T. Paskova, D.A. Hanser, K.R. Evans, GaN substrates for III-nitride sevices. Proc. IEEE 98,
1324–1338 (2010)
6. K. Sardar, C.N.R. Rao, New solvothermal routes for GaN nanocrystals. Adv. Mater. 16, 425
(2004)
7. S. Nakamura, The roles of structural imperfections in InGaN-Based blue light-emitting diodes
and laser diodes. Science 281, 956–961 (1998)
8. H. Masui, S. Nakamura, S.P. Den Baars et al., Nonpolar and semipolar III-nitride light-emitting
diodes: achievements and challenges. IEEE Trans. Electron Devices 57(1), 88–100 (2010)
9. J. Jang, S. Woo, D. Min, O. Nam, Recent advances in nonpolar and semipolar InGaN lightemitting diodes (LEDs). J. Nanosci. Nanotechnol. 15, 1895–1906 (2015)
10. M.H. Crawford, LED for solid-state lighting: performance challenges and recent advances.
IEEE J. Selected Topics Quantum Electron. 15, 1028–1040 (2009)
11. T.W. Yeh, Y.T. Lin, L. Stewart, et al, InGaN/GaN multiple quantum wells grown on nonpolar
facets of vertical GaN nanorod arrays. Nano Lett. 12(6), 3257–3262 (2012)
12. J.H. Park, D.Y. Kim, S.Y. Hwang, et al, Enhanced overall efficiency of GaInN-based
light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN
superlattice electronic blocking layer. Appl. Phys. Lett. 103(6), 061104 (2013)
13. J.O. Song, J.S. Ha, T.Y. Seong, Ohmic-contact technology for GaN-based light-emitting diodes:
role of p-type contact. IEEE Trans. Electron Devices 57(1), 42–59 (2010)
14. F. Bonaccorso, Z. Sun, T. Hasan et al., Graphene photonics and optoelectronics. Nat. Photonics
4(9), 611–622 (2010)
15. J.J. Wierer, A. David, M.M. Megens, III-nitride photonic-crystal light-emitting diodes with
high extraction efficiency. Nat. Photonics 3, 163–169 (2009)
16. M.K. Kwon, J.Y. Kim, B.Y. Kim, et al., Surface-plasmon-enhanced light-emitting diodes. Adv.
Mater. 20(7), 1253 (2008)
17. A.I. Zhmakin AI. Enhancement of light extraction from light emitting diodes. Phys. Rep. Rev.
Sect. Phys. Lett. 498, 189–241 (2011)
18. O. Ueda On degradation studies of III-V compound semiconductor optical devices over three
decades: focusing on gradual degradation. Jpn. J. Appl. Phys. 49(9), 090001 (2010)
19. M. Chang, D. Das, P. Varde, et al., Light emitting diodes reliability review. Microelectr. Reliabil.
52, 762–782 (2012)
20. E.F. Schubert, J.K. Kim, Solid-state light sources get smart. Science 308, 1274–1278 (2005)