7.4 Current Injection Efficiency Improvement Technology
135
Fig. 7.17 Surface morphology of self-assembled p-GaN photonic crystal LED
Fig. 7.18 Sectional view of n-GaN implanted photonic crystal
7.4.1 Current Spreading Layer
As a current-driven light-emitting device, the current distribution in the LED during
operation can have a large impact on the performance of the LED itself. In one aspect,
the injected longitudinal current in the active region of LED is capable of driving LED
light emission. The higher the current density within a range not exceeding a certain
limit, the larger the number of carriers participating in light emission per unit area
is. However, there is no simple linear proportional relationship between them. The
proportion of light emitted from different regions of the chip that escapes outside the
chip also changes. Therefore, the distribution of current will definitely affect the light
135
Fig. 7.17 Surface morphology of self-assembled p-GaN photonic crystal LED
Fig. 7.18 Sectional view of n-GaN implanted photonic crystal
7.4.1 Current Spreading Layer
As a current-driven light-emitting device, the current distribution in the LED during
operation can have a large impact on the performance of the LED itself. In one aspect,
the injected longitudinal current in the active region of LED is capable of driving LED
light emission. The higher the current density within a range not exceeding a certain
limit, the larger the number of carriers participating in light emission per unit area
is. However, there is no simple linear proportional relationship between them. The
proportion of light emitted from different regions of the chip that escapes outside the
chip also changes. Therefore, the distribution of current will definitely affect the light