96
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
(CH 3 ) 3 Al + (1 − x)(CH 3 ) 3 Ca + NH 3 → Al x Ga 1−x N + 3CH 4
(6.4)
In fact, MOCVD growth of III-nitrides is a very complex process, accompanied
by multiple parallel and series of reaction steps, including complex decomposition
reactions, pre-reactions, parasitic reactions, isomorphisms and isomerization reactions. Figure 6.3a, b show the theoretical kinetic models of gas phase and surface
chemistry in the epitaxial growth of AlN and GaN by MOCVD [6, 7].
Fig. 6.3 The schematic diagram of AlN a and GaN b growth process in MOCVD
6 AlGaN-Based Multiple-Quantum-Well Materials and UV LEDs
(CH 3 ) 3 Al + (1 − x)(CH 3 ) 3 Ca + NH 3 → Al x Ga 1−x N + 3CH 4
(6.4)
In fact, MOCVD growth of III-nitrides is a very complex process, accompanied
by multiple parallel and series of reaction steps, including complex decomposition
reactions, pre-reactions, parasitic reactions, isomorphisms and isomerization reactions. Figure 6.3a, b show the theoretical kinetic models of gas phase and surface
chemistry in the epitaxial growth of AlN and GaN by MOCVD [6, 7].
Fig. 6.3 The schematic diagram of AlN a and GaN b growth process in MOCVD