Contents
THz Bandpass Filter Design Using Metamaterial-Based Defected 1D
Photonic Crystal Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Arpan Deyasi and Angsuman Sarkar
Terahertz Radiators Based on Silicon Carbide Avalanche Transit
Time Sources—Part I: Large-Signal Characteristics . . . . . . . . . . . . . . . 23
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Terahertz Radiators Based on Silicon Carbide Avalanche Transit
Time Sources—Part II: Avalanche Noise Characteristics . . . . . . . . . . . . 37
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
RF Performance of Ultra-wide Bandgap HEMTs . . . . . . . . . . . . . . . . . . 49
Rajan Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain,
H. Q. T. Bui and H. P. T. Nguyen
Potentiality of Impact Avalanche Transit Time Diode as Terahertz
Source Based on Group IV and III–V Semiconducting Materials . . . . . 65
Girish Chandra Ghivela, S. J. Mukhopadhyay, Joydeep Sengupta
and M. Mitra
Analysis of InN-Based Surrounded Gate Tunnel Field-Effect
Transistor for Terahertz Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Ritam Dutta and Nitai Paitya
On the Quantum Capacitance of Quantum Wire Field-Effect
Transistors of Compound Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 85
A. H. Seikh, N. Alharthi, P. K. Bose and K. P. Ghatak
Heterostructure Devices for THz Signal Recognition . . . . . . . . . . . . . . . 107
Amit Bhattacharyya, Manash Chanda and Debashis De
Data Transmission with Terahertz Communication Systems . . . . . . . . . 121
Mohammed El Ghzaoui and Sudipta Das
vii