30
S. J. Mukhopadhyay et al.
Fig. 7 Changes of V B , V A , and x A of DDR IMPATT diodes based on Si, 3C-SiC, and diamond
versus operating frequency plots
Experimentally measured power output of Si IMPATT sources are 600 and 300
mW at 94 and 140 GHz, respectively [16, 17], which are very close to the simulation
results. This comparison with experimental results validates the simulation method
highlighted herein. So far, at mm-wave or THz frequency band, experimental study
on the 3C-SiC and diamond-based IMPATT devices are not available; that is why
comparison could not be made with the simulation results.
5 Conclusion
The static and large-signal analysis have been carried out and presented here in order
to focus the potentialities of DDR IMPATT sources based on WBG semiconductors
like 3C-SiC and type-IIb diamond (C) as mm-wave and THz frequency radiators.
High-frequency characteristics of those sources have been compared with the DDR
IMPATTs based on the conventional semiconductor substance, i.e., Si. The simulation studies show that the DDR 3C-SiC IMPATTs possess better RF power delivery
capability from 140 GHz to 1.0 THz as compared to the diamond IMPATTs, whereas
the diamond IMPATT source is a better option for RF power generation at 94 GHz
S. J. Mukhopadhyay et al.
Fig. 7 Changes of V B , V A , and x A of DDR IMPATT diodes based on Si, 3C-SiC, and diamond
versus operating frequency plots
Experimentally measured power output of Si IMPATT sources are 600 and 300
mW at 94 and 140 GHz, respectively [16, 17], which are very close to the simulation
results. This comparison with experimental results validates the simulation method
highlighted herein. So far, at mm-wave or THz frequency band, experimental study
on the 3C-SiC and diamond-based IMPATT devices are not available; that is why
comparison could not be made with the simulation results.
5 Conclusion
The static and large-signal analysis have been carried out and presented here in order
to focus the potentialities of DDR IMPATT sources based on WBG semiconductors
like 3C-SiC and type-IIb diamond (C) as mm-wave and THz frequency radiators.
High-frequency characteristics of those sources have been compared with the DDR
IMPATTs based on the conventional semiconductor substance, i.e., Si. The simulation studies show that the DDR 3C-SiC IMPATTs possess better RF power delivery
capability from 140 GHz to 1.0 THz as compared to the diamond IMPATTs, whereas
the diamond IMPATT source is a better option for RF power generation at 94 GHz