Terahertz Radiators Based on Silicon
Carbide Avalanche Transit Time
Sources—Part I: Large-Signal
Characteristics
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Abstract The static and high-frequency simulations have been performed to explore
the potency of avalanche transit time (ATT) oscillators based upon wide bandgap
(WBG) semiconducting substances like 3C-SiC and type-IIb diamond (C) as
millimeter-wave (mm-wave) and terahertz (THz) wave generators; characteristics of
those sources have been compared with the DDR IMPATTs on the basis of traditional
substance, i.e., Si. A non-sinusoidal voltage excited (NSVE) large-signal simulation
procedure has been employed here to scrutinize the static and large-signal features
of the sources. The simulation studies show that the DDR 3C-SiC IMPATTs possess
better RF power delivery capability from 140 GHz to 1.0 THz as compared to the
diamond IMPATTs, whereas the diamond IMPATT source is a better option for RF
power generation at 94 GHz due to its better power generation capability at lower
mm-wave frequencies. However, IMPATT sources based on both 3C-SiC and diamond are much powerful in comparison with mm-wave and THz IMPATT sources
based on Si.
Keywords 3C-SiC · Diamond · IMPATT · Millimeter-wave · Si · Terahertz
1 Introduction
This is widely recognized that impact avalanche transit time (IMPATT) devices
proved the capacity of generating sufficient power at microwave, millimeter-wave,
and terahertz frequency bands [1–6]. Researchers had to choose THz frequency
domain because of overcrowd in lower frequency bands for communication. The
S. J. Mukhopadhyay · M. Mitra
Department of ETC, IIEST, Shibpur, Howrah, West Bengal 711103, India
P. Mukherjee
Department of Electrical Engineering, Cooch Bihar Government Engineering College, Cooch
Behar, West Bengal 736170, India
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Bihar Government
Engineering College, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_2
23
Carbide Avalanche Transit Time
Sources—Part I: Large-Signal
Characteristics
S. J. Mukhopadhyay, P. Mukherjee, A. Acharyya and M. Mitra
Abstract The static and high-frequency simulations have been performed to explore
the potency of avalanche transit time (ATT) oscillators based upon wide bandgap
(WBG) semiconducting substances like 3C-SiC and type-IIb diamond (C) as
millimeter-wave (mm-wave) and terahertz (THz) wave generators; characteristics of
those sources have been compared with the DDR IMPATTs on the basis of traditional
substance, i.e., Si. A non-sinusoidal voltage excited (NSVE) large-signal simulation
procedure has been employed here to scrutinize the static and large-signal features
of the sources. The simulation studies show that the DDR 3C-SiC IMPATTs possess
better RF power delivery capability from 140 GHz to 1.0 THz as compared to the
diamond IMPATTs, whereas the diamond IMPATT source is a better option for RF
power generation at 94 GHz due to its better power generation capability at lower
mm-wave frequencies. However, IMPATT sources based on both 3C-SiC and diamond are much powerful in comparison with mm-wave and THz IMPATT sources
based on Si.
Keywords 3C-SiC · Diamond · IMPATT · Millimeter-wave · Si · Terahertz
1 Introduction
This is widely recognized that impact avalanche transit time (IMPATT) devices
proved the capacity of generating sufficient power at microwave, millimeter-wave,
and terahertz frequency bands [1–6]. Researchers had to choose THz frequency
domain because of overcrowd in lower frequency bands for communication. The
S. J. Mukhopadhyay · M. Mitra
Department of ETC, IIEST, Shibpur, Howrah, West Bengal 711103, India
P. Mukherjee
Department of Electrical Engineering, Cooch Bihar Government Engineering College, Cooch
Behar, West Bengal 736170, India
A. Acharyya (B)
Department of Electronics and Communication Engineering, Cooch Bihar Government
Engineering College, Cooch Behar, West Bengal 736170, India
e-mail: ari_besu@yahoo.co.in
© Springer Nature Singapore Pte Ltd. 2020
A. Biswas et al. (eds.), Emerging Trends in Terahertz Solid-State Physics and Devices,
https://doi.org/10.1007/978-981-15-3235-1_2
23