Figure 2.9 shows the effects of p
0
0 À n
0
0 , while k ¼ k 0 is kept constant. When
p
0
0 À n
0
0 increases, the fields in the figure become stronger and vary more rapidly as
expected.
r
Holes
Interface
Electrons
0
p′
0
n′
0
p′′
0
n′′
a
O
Fig. 2.8 Doping profile
Fig. 2.9 Effects of p
0
0 À n
0
0 . (a) Δp À Δn showing the formation of a PN junction. (b) Built-in
electric field E r . (c) Built-in electric potential φ(r)
2.3 Circular PN Junction
23
0
0 À n
0
0 , while k ¼ k 0 is kept constant. When
p
0
0 À n
0
0 increases, the fields in the figure become stronger and vary more rapidly as
expected.
r
Holes
Interface
Electrons
0
p′
0
n′
0
p′′
0
n′′
a
O
Fig. 2.8 Doping profile
Fig. 2.9 Effects of p
0
0 À n
0
0 . (a) Δp À Δn showing the formation of a PN junction. (b) Built-in
electric field E r . (c) Built-in electric potential φ(r)
2.3 Circular PN Junction
23