when k increases, the fields vary more rapidly near the interface. This can be seen
clearly in the figure.
Figure 2.4 shows effectively the distribution of the net doping and mobile charge
concentration near the interface, i.e., the right-hand side of Eq. (1.10) 1 divided by q.
This does not include the effective polarization charge. The distribution in the figure
localizes near the interface and has a sign change there, showing the formation of a
PN junction. These charges are often approximated by locally piecewise uniform
charge distributions under the depletion layer approximation in common
Fig. 2.3 Carrier
concentrations near the
interface. (a) p(x 3 ) for holes.
(b) n(x 3 ) for electrons
2.2 Abrupt PN Junction
17
clearly in the figure.
Figure 2.4 shows effectively the distribution of the net doping and mobile charge
concentration near the interface, i.e., the right-hand side of Eq. (1.10) 1 divided by q.
This does not include the effective polarization charge. The distribution in the figure
localizes near the interface and has a sign change there, showing the formation of a
PN junction. These charges are often approximated by locally piecewise uniform
charge distributions under the depletion layer approximation in common
Fig. 2.3 Carrier
concentrations near the
interface. (a) p(x 3 ) for holes.
(b) n(x 3 ) for electrons
2.2 Abrupt PN Junction
17