Index
A
Abrupt junction, 14
Aluminum nitride (AlN), 215
Antiplane crack, 24–26
Antiplane motions, 141
Antiplane problems, 7
Antiplane waves, 27–29
Axial electric polarization, 184, 191
Axial forces, 206
B
Barium titanate (BaTiO 3 ), 215
Beam arrays, 111
Beams bending, e 15
axial electric field, 167
boundary conditions, 166
cantilever beam, 165
carrier concentration perturbations, 164
constitutive relations, 163
differential element, 165
electric field components, 163
geometric parameters, 167
global charge neutrality conditions, 166
holes and electrons conservation, 165
integration constant, 167
linear ordinary differential equations, 166
material constants, 163
moment equation, 165
nonpiezoelectric semiconductor layer,
161, 162
normal stress, 161
piezoelectric dielectric layer, 161
rotatory inertia, 165
shear deformation, 162
shear force, 164
strains and substitute, 163
stress components, 163
transverse shear force F, 161
undetermined constant, 166, 167
Beams bending, e 33
bending moment M, 156
boundary conditions, 159
cantilever static bending, 158
differential element, 157, 160, 162
electric displacement, 157
electric potential and field, 155
elementary/classical, 157
global charge neutrality conditions, 160
integration, 157
lower ceramic layer, 156
mechanically induced redistribution,
160, 161
moment equation, 157
nonpiezoelectric semiconductor layer, 155
one-dimensional conservation, 158
piezoelectric semiconductor layer, 155
PZTs and BaTiO 3 , 160
reference carrier concentrations, 160
rotatory inertia, 157
shear deformation, 155
static, 160
stress and electric displacement, 156
stress approximation, 156
undetermined constants, 159
Bending
equations (see One-dimensional equations)
shear deformation, 93
static bending (see Cantilever static
bending)
© Springer Nature Switzerland AG 2020
J. Yang, Analysis of Piezoelectric Semiconductor Structures,
https://doi.org/10.1007/978-3-030-48206-0
223