piezoelectric dielectrics and nonpiezoelectric semiconductors. Thus the composite
rod effectively behaves like a homogeneous piezoelectric semiconductor rod such as
ZnO.
Figure 6.5 shows the effect of the initial carrier concentration n 0 when
F ¼ 4.25 nN, while all other parameters are kept the same as those used for
Fig. 6.4. It can be seen that the fields are sensitive to n 0 . A larger n 0 causes a more
rapid change of Δn near the ends of the rod. This can be explained by the dependence of k on n 0 in Eq. (6.69). A larger n 0 leads to a larger k and hence more rapid
variations of the hyperbolic functions in Δn.
Fig. 6.4 Distribution of
electron concentration
perturbation Δn for different
values of the axial force
Fig. 6.5 Distribution of
electron concentration
perturbation Δn for different
values of n 0
6.2 Extension of Rods
153
rod effectively behaves like a homogeneous piezoelectric semiconductor rod such as
ZnO.
Figure 6.5 shows the effect of the initial carrier concentration n 0 when
F ¼ 4.25 nN, while all other parameters are kept the same as those used for
Fig. 6.4. It can be seen that the fields are sensitive to n 0 . A larger n 0 causes a more
rapid change of Δn near the ends of the rod. This can be explained by the dependence of k on n 0 in Eq. (6.69). A larger n 0 leads to a larger k and hence more rapid
variations of the hyperbolic functions in Δn.
Fig. 6.4 Distribution of
electron concentration
perturbation Δn for different
values of the axial force
Fig. 6.5 Distribution of
electron concentration
perturbation Δn for different
values of n 0
6.2 Extension of Rods
153