4.3 Registry and Sublayer-Order Resolution
71
98.5
99.0
99.5
100.0
Si(100) 2p 3/2
hv = 130 eV
Exp
S 2
S 1
B
Intensity (a.u.)
BE (eV)
(a)
98.5
99.0
99.5
100.0
Exp
S 2
S 1
B
BE (eV)
(b)
Si(111) 2p 3/2
hv = 106 eV
Intensity (a.u.)
28.5
29.0
29.5
30.0
30.5
Intensity (a.u.)
BE (eV)
Exp
B
S 2
S 1
Ge(100) 3d
hv = 90 eV
(c)
28.5
29.0
29.5
30.0
30.5
Intensity (a.u.)
BE (eV)
Exp
B
S 2
S 1
Ge(111) 3d
hv = 90 eV
(d)
Fig. 4.9 Sublayer-resolved XPS spectra for the (100) and (111) skins of (a, b) Si 2p 3/2 [57, 58] and
(c, d) Ge 3d 5/2 [21, 59]. Three Gaussian components represent the B, S 2 , and S 1 states. Table 4.2
summarizes the respectively optimized z, E ν (z), E ν (0), and ν (12). Reprinted with permission
from [62]. Copyright 2014 American Institute of Physics
Table 4.3 Sublayer-resolved atomic CN(z), E ν (z), E ν (0), bulk shift ΔE ν (12), strain ε r , relative
bond energy δE z , cohesive energy δE C , and energy density δE D , for the diamond-structured Si [57,
58] and Ge [21, 59] skins
i
z
Si 2p 3/2
Ge 3d 5/2
−ε z (%)
δE z
−δE coh
δE den
m
4.88 [60]
5.47 [61]
E ν (0)
–
0
96.089
27.579
E ν (12)
B
12
98.550
28.960
0
0
0
0
E ν (12)
–
2.461
1.381
σ
0.003
0.002
(100)
S 2
6.76
99.224
29.391
4.84
31.18
26.10
52.24
S 1
5.08
99.884
29.823
8.49
62.50
31.21
112.08
(111)
S 2
7.08
99.143
29.339
4.34
27.47
24.79
45.62
S 1
5.39
99.719
29.713
7.65
54.54
30.58
96.22
71
98.5
99.0
99.5
100.0
Si(100) 2p 3/2
hv = 130 eV
Exp
S 2
S 1
B
Intensity (a.u.)
BE (eV)
(a)
98.5
99.0
99.5
100.0
Exp
S 2
S 1
B
BE (eV)
(b)
Si(111) 2p 3/2
hv = 106 eV
Intensity (a.u.)
28.5
29.0
29.5
30.0
30.5
Intensity (a.u.)
BE (eV)
Exp
B
S 2
S 1
Ge(100) 3d
hv = 90 eV
(c)
28.5
29.0
29.5
30.0
30.5
Intensity (a.u.)
BE (eV)
Exp
B
S 2
S 1
Ge(111) 3d
hv = 90 eV
(d)
Fig. 4.9 Sublayer-resolved XPS spectra for the (100) and (111) skins of (a, b) Si 2p 3/2 [57, 58] and
(c, d) Ge 3d 5/2 [21, 59]. Three Gaussian components represent the B, S 2 , and S 1 states. Table 4.2
summarizes the respectively optimized z, E ν (z), E ν (0), and ν (12). Reprinted with permission
from [62]. Copyright 2014 American Institute of Physics
Table 4.3 Sublayer-resolved atomic CN(z), E ν (z), E ν (0), bulk shift ΔE ν (12), strain ε r , relative
bond energy δE z , cohesive energy δE C , and energy density δE D , for the diamond-structured Si [57,
58] and Ge [21, 59] skins
i
z
Si 2p 3/2
Ge 3d 5/2
−ε z (%)
δE z
−δE coh
δE den
m
4.88 [60]
5.47 [61]
E ν (0)
–
0
96.089
27.579
E ν (12)
B
12
98.550
28.960
0
0
0
0
E ν (12)
–
2.461
1.381
σ
0.003
0.002
(100)
S 2
6.76
99.224
29.391
4.84
31.18
26.10
52.24
S 1
5.08
99.884
29.823
8.49
62.50
31.21
112.08
(111)
S 2
7.08
99.143
29.339
4.34
27.47
24.79
45.62
S 1
5.39
99.719
29.713
7.65
54.54
30.58
96.22