4.3 Registry and Sublayer-Order Resolution
65
59.5
60.0
60.5
61.0
61.5
62.0
(a)
Intensity (a.u.)
BE (eV)
Exp
B
S 2
S 1
Ir 4f 7/2 (100)
hv=140eV
72.5
72.6
72.7
72.8
72.9
Al(100) 2p 3/2
hv=95 eV
Envelope
B
S 2
S 1
Intensity (a.u.)
BE (eV)
(d)
59.5
60.0
60.5
61.0
61.5
62.0
(b)
Intensity (a.u.)
Ir 4f 7/2 (111)
hv=160eV
Exp
B
S 2
S 1
BE (eV)
72.5
72.6
72.7
72.8
72.9
Al(111)
hv=95 eV
Envelope
B
S 2
S 1
Intensity (a.u.)
BE (eV)
(e)
59.5
60.0 60.5
61.0
61.5
62.0
(c)
Intensity (a.u)
Exp
B
S 2
S 1
S E
BE (eV)
Ir (210) 4f 7/2
hv = 180 eV
Fig. 4.4 Decomposition of (a–c) the XPS 4f 7/2 spectra for Ir(111), Ir(001), and Ir(210) skins [39–
41] and (d–e) the XPS 2p 3/2 spectra for Al(001) and Al(111) skins [42] with Gaussian components
representing the bulk B, S 2 and S 1 sublayers and defect D from higher to lower BE. Reprinted with
permission from [43, 44]. Copyright 2012 American Chemical Society. Copyright 2014 Elsevier