390
20 Wonders of Multifield Lattice Oscillation
60. R. Thamankar, T.L. Yap, K.E.J. Goh, C. Troadec, C. Joachim, Low temperature nanoscale
electronic transport on the MoS 2 surface. Appl. Phys. Lett. 103(8), 083106 (2013)
61. Z. Huang, W. Han, H. Tang, L. Ren, D.S. Chander, X. Qi, H. Zhang, Photoelectrochemicaltype sunlight photodetector based on MoS 2 /graphene heterostructure. 2D Mater. 2(3), 035011
(2015)
62. V. Kaushik, D. Varandani, B.R. Mehta, Nanoscale mapping of layer-dependent surface potential and junction properties of CVD-grown MoS 2 domains. J. Phys. Chem. C 119(34),
20136–20142 (2015)
63. X. Zhang, Y.G. Nie, W.T. Zheng, J.L. Kuo, C.Q. Sun, Discriminative generation and hydrogen
modulation of the Dirac-Fermi polarons at graphene edges and atomic vacancies. Carbon
49(11), 3615–3621 (2011)
64. D. Li, K. Zhang, M. Song, N. Zhai, C. Sun, H. Li, High-pressure Raman study of
Terephthalonitrile. Spectrochim. Acta Part A Mol. Biomol. Spectrosc. 173, 376–382 (2017)
65. T.M.G. Mohiuddin, A. Lombardo, R.R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D.M.
Basko, C. Galiotis, N. Marzari, K.S. Novoselov, A.K. Geim, A.C. Ferrari, Uniaxial strain
in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample
orientation. Phys. Rev. B 79(20), 205433 (2009)
66. Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Uniaxial Strain on Graphene:
Raman spectroscopy study and band-gap opening. ACS Nano 2(11), 2301–2305 (2008)
67. J.E. Proctor, E. Gregoryanz, K.S. Novoselov, M. Lotya, J.N. Coleman, M.P. Halsall, Highpressure Raman spectroscopy of graphene. Phys. Rev. B 80(7), 073408 (2009)
68. A. Taube, A. Łapi´ nska, J. Judek, N. Wochtman, M. Zdrojek, Temperature induced phonon
behaviour in germanium selenide thin films probed by Raman spectroscopy. J. Phys. D Appl.
Phys. 49(31), 315301 (2016)
69. M.S. Liu, L.A. Bursill, S. Prawer, R. Beserman, Temperature dependence of the first-order
Raman phonon lime of diamond. Phys. Rev. B 61(5), 3391–3395 (2000)
70. H. Herchen, M.A. Cappelli, First-order Raman spectrum of diamond at high temperatures.
Phys. Rev. B 43(14), 11740 (1991)
71. W. Borer, S. Mitra, K. Namjoshi, Line shape and temperature dependence of the first order
Raman spectrum of diamond. Solid State Commun. 9(16), 1377–1381 (1971)
72. J.B. Cui, K. Amtmann, J. Ristein, L. Ley, Noncontact temperature measurements of diamond
by Raman scattering spectroscopy. J. Appl. Phys. 83(12), 7929–7933 (1998)
73. M.S. Liu, L.A. Bursill, S. Prawer, K. Nugent, Y. Tong, G. Zhang, Temperature dependence
of Raman scattering in single crystal GaN films. Appl. Phys. Lett. 74(21), 3125–3127 (1999)
74. M. Tangi, P. Mishra, B. Janjua, T.K. Ng, D.H. Anjum, A. Prabaswara, Y. Yang, A.M. Albadri,
A.Y. Alyamani, M.M. El-Desouki, Bandgap measurements and the peculiar splitting of E2H
phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy.
J. Appl. Phys. 120(4), 045701 (2016)
75. M.C. Klein, F. Hache, D. Ricard, C. Flytzanis, Size dependence of electron-phonon coupling
in semiconductor nanospheres—the case of CdSe. Phys. Rev. B 42(17), 11123–11132 (1990)
76. C. Trallero-Giner, A. Debernardi, M. Cardona, E. Menendez-Proupin, A.I. Ekimov, Optical
vibrons in CdSe dots and dispersion relation of the bulk material. Phys. Rev. B 57(8), 4664–
4669 (1998)
77. C.J. Zhang, P. Hu, The possibility of single C-H bond activation in CH 4 on a MoO 3 -supported
Pt catalyst: a density functional theory study. J. Chem. Phys. 116(10), 4281–4285 (2002)
78. C.Q. Sun, S. Li, B.K. Tay, Laser-like mechanoluminescence in ZnMnTe-diluted magnetic
semiconductor. Appl. Phys. Lett. 82(20), 3568–3569 (2003)
79. W. Lu, H. Nan, J. Hong, Y. Chen, C. Zhu, Z. Liang, X. Ma, Z. Ni, C. Jin, Z. Zhang, Plasmaassisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res
7(6), 853–859 (2014)
80. V. Tran, R. Soklaski, Y. Liang, L. Yang, Layer-controlled band gap and anisotropic excitons
in few-layer black phosphorus. Phys. Rev. B 89(23), 235319 (2014)
81. G. Viera, S. Huet, L. Boufendi, Crystal size and temperature measurements in nanostructured
silicon using Raman spectroscopy. J. Appl. Phys. 90(8), 4175–4183 (2001)
20 Wonders of Multifield Lattice Oscillation
60. R. Thamankar, T.L. Yap, K.E.J. Goh, C. Troadec, C. Joachim, Low temperature nanoscale
electronic transport on the MoS 2 surface. Appl. Phys. Lett. 103(8), 083106 (2013)
61. Z. Huang, W. Han, H. Tang, L. Ren, D.S. Chander, X. Qi, H. Zhang, Photoelectrochemicaltype sunlight photodetector based on MoS 2 /graphene heterostructure. 2D Mater. 2(3), 035011
(2015)
62. V. Kaushik, D. Varandani, B.R. Mehta, Nanoscale mapping of layer-dependent surface potential and junction properties of CVD-grown MoS 2 domains. J. Phys. Chem. C 119(34),
20136–20142 (2015)
63. X. Zhang, Y.G. Nie, W.T. Zheng, J.L. Kuo, C.Q. Sun, Discriminative generation and hydrogen
modulation of the Dirac-Fermi polarons at graphene edges and atomic vacancies. Carbon
49(11), 3615–3621 (2011)
64. D. Li, K. Zhang, M. Song, N. Zhai, C. Sun, H. Li, High-pressure Raman study of
Terephthalonitrile. Spectrochim. Acta Part A Mol. Biomol. Spectrosc. 173, 376–382 (2017)
65. T.M.G. Mohiuddin, A. Lombardo, R.R. Nair, A. Bonetti, G. Savini, R. Jalil, N. Bonini, D.M.
Basko, C. Galiotis, N. Marzari, K.S. Novoselov, A.K. Geim, A.C. Ferrari, Uniaxial strain
in graphene by Raman spectroscopy: G peak splitting, Gruneisen parameters, and sample
orientation. Phys. Rev. B 79(20), 205433 (2009)
66. Z.H. Ni, T. Yu, Y.H. Lu, Y.Y. Wang, Y.P. Feng, Z.X. Shen, Uniaxial Strain on Graphene:
Raman spectroscopy study and band-gap opening. ACS Nano 2(11), 2301–2305 (2008)
67. J.E. Proctor, E. Gregoryanz, K.S. Novoselov, M. Lotya, J.N. Coleman, M.P. Halsall, Highpressure Raman spectroscopy of graphene. Phys. Rev. B 80(7), 073408 (2009)
68. A. Taube, A. Łapi´ nska, J. Judek, N. Wochtman, M. Zdrojek, Temperature induced phonon
behaviour in germanium selenide thin films probed by Raman spectroscopy. J. Phys. D Appl.
Phys. 49(31), 315301 (2016)
69. M.S. Liu, L.A. Bursill, S. Prawer, R. Beserman, Temperature dependence of the first-order
Raman phonon lime of diamond. Phys. Rev. B 61(5), 3391–3395 (2000)
70. H. Herchen, M.A. Cappelli, First-order Raman spectrum of diamond at high temperatures.
Phys. Rev. B 43(14), 11740 (1991)
71. W. Borer, S. Mitra, K. Namjoshi, Line shape and temperature dependence of the first order
Raman spectrum of diamond. Solid State Commun. 9(16), 1377–1381 (1971)
72. J.B. Cui, K. Amtmann, J. Ristein, L. Ley, Noncontact temperature measurements of diamond
by Raman scattering spectroscopy. J. Appl. Phys. 83(12), 7929–7933 (1998)
73. M.S. Liu, L.A. Bursill, S. Prawer, K. Nugent, Y. Tong, G. Zhang, Temperature dependence
of Raman scattering in single crystal GaN films. Appl. Phys. Lett. 74(21), 3125–3127 (1999)
74. M. Tangi, P. Mishra, B. Janjua, T.K. Ng, D.H. Anjum, A. Prabaswara, Y. Yang, A.M. Albadri,
A.Y. Alyamani, M.M. El-Desouki, Bandgap measurements and the peculiar splitting of E2H
phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy.
J. Appl. Phys. 120(4), 045701 (2016)
75. M.C. Klein, F. Hache, D. Ricard, C. Flytzanis, Size dependence of electron-phonon coupling
in semiconductor nanospheres—the case of CdSe. Phys. Rev. B 42(17), 11123–11132 (1990)
76. C. Trallero-Giner, A. Debernardi, M. Cardona, E. Menendez-Proupin, A.I. Ekimov, Optical
vibrons in CdSe dots and dispersion relation of the bulk material. Phys. Rev. B 57(8), 4664–
4669 (1998)
77. C.J. Zhang, P. Hu, The possibility of single C-H bond activation in CH 4 on a MoO 3 -supported
Pt catalyst: a density functional theory study. J. Chem. Phys. 116(10), 4281–4285 (2002)
78. C.Q. Sun, S. Li, B.K. Tay, Laser-like mechanoluminescence in ZnMnTe-diluted magnetic
semiconductor. Appl. Phys. Lett. 82(20), 3568–3569 (2003)
79. W. Lu, H. Nan, J. Hong, Y. Chen, C. Zhu, Z. Liang, X. Ma, Z. Ni, C. Jin, Z. Zhang, Plasmaassisted fabrication of monolayer phosphorene and its Raman characterization. Nano Res
7(6), 853–859 (2014)
80. V. Tran, R. Soklaski, Y. Liang, L. Yang, Layer-controlled band gap and anisotropic excitons
in few-layer black phosphorus. Phys. Rev. B 89(23), 235319 (2014)
81. G. Viera, S. Huet, L. Boufendi, Crystal size and temperature measurements in nanostructured
silicon using Raman spectroscopy. J. Appl. Phys. 90(8), 4175–4183 (2001)