116
Analyse et technologie des surfaces
Références
[6.1] HUNT C.P. et M.P. SEAH, «Characterization of a High Depth-Resolution Tantalum Pentoxide
Sputter Profiling Reference Material ». Surface and Interface Analysis, 5(5), pp. 199-209,
1983.
[6.2] BCR, standard no. 261 (Ta2O5), B-2440 Geel/Belgium: Europ. Commission, Inst. for Ref.
Materials and Measurements IRMM.
[6.3] HOFMANN S., «Sputter depth profiling of thin films», High Temperature Materials and Processes, 17(1-2), pp. 13-28, 1998.
[6.4] SEAH M.P., «Pure Element Sputtering Yields Using 500-1000 eV Argon Ions», Thin Sol.
Films, 81, pp. 279-287, 1981.
[6.5] KELLY R. et N.Q. LAM, «The Sputtering of Oxides – Part I: A Survey of the Experimental
Results», Radiation Effects, 19, p. 39, 1973.
[6.6] WILSON R.G., F.A. STEVIE et C.W. MAGEE, Secondary Ion Mass Spectrometry – A Practical
Handbook for Depth Profiling and Bulk Impurity Analysis, 1989, New York, John Wiley &
Sons.
[6.7] ARLINGHAUS H.F. et al., «Quantitative and sensitive profiling of dopants and impurities in
semiconductors using sputter-initiated resonance ionization spectroscopy», J. Vac. Sci.
Techn., A 11(4), pp. 2317-2323, 1993.
[6.8] BENGTSON A., «Quantitative depth profile analysis by glow discharge – A review», Spectrochimica Acta, 49B(4), pp. 411-429, 1994.
[6.9] MATHIEU H.J., «AES and XPS depth profile analysis – a critical review», Le Vide, 52,
pp. 81-91, 1996.
[6.10] DELFOSSE D., priv. communication, 1999.
[6.11] ZALAR A., Thin Solid Films, 124, 1985.
[6.12] PITTON Y., Etude de l’adhésion de films minces SiO x déposés sur polyéthylène téraphtalate,
thèse N° 1553, EPFL Lausanne, 1996.
[6.13] MURALT P., priv. communication, 2000.
[6.14] SUZUKI H., Coating Analysis, in Glow Discharge Optical Emission Spectroscopy, R. Payling,
D.G. Jones, and A. Bengtson, Editors, John Wiley & Sons, Chichester, pp. 723-728, 1997.
Analyse et technologie des surfaces
Références
[6.1] HUNT C.P. et M.P. SEAH, «Characterization of a High Depth-Resolution Tantalum Pentoxide
Sputter Profiling Reference Material ». Surface and Interface Analysis, 5(5), pp. 199-209,
1983.
[6.2] BCR, standard no. 261 (Ta2O5), B-2440 Geel/Belgium: Europ. Commission, Inst. for Ref.
Materials and Measurements IRMM.
[6.3] HOFMANN S., «Sputter depth profiling of thin films», High Temperature Materials and Processes, 17(1-2), pp. 13-28, 1998.
[6.4] SEAH M.P., «Pure Element Sputtering Yields Using 500-1000 eV Argon Ions», Thin Sol.
Films, 81, pp. 279-287, 1981.
[6.5] KELLY R. et N.Q. LAM, «The Sputtering of Oxides – Part I: A Survey of the Experimental
Results», Radiation Effects, 19, p. 39, 1973.
[6.6] WILSON R.G., F.A. STEVIE et C.W. MAGEE, Secondary Ion Mass Spectrometry – A Practical
Handbook for Depth Profiling and Bulk Impurity Analysis, 1989, New York, John Wiley &
Sons.
[6.7] ARLINGHAUS H.F. et al., «Quantitative and sensitive profiling of dopants and impurities in
semiconductors using sputter-initiated resonance ionization spectroscopy», J. Vac. Sci.
Techn., A 11(4), pp. 2317-2323, 1993.
[6.8] BENGTSON A., «Quantitative depth profile analysis by glow discharge – A review», Spectrochimica Acta, 49B(4), pp. 411-429, 1994.
[6.9] MATHIEU H.J., «AES and XPS depth profile analysis – a critical review», Le Vide, 52,
pp. 81-91, 1996.
[6.10] DELFOSSE D., priv. communication, 1999.
[6.11] ZALAR A., Thin Solid Films, 124, 1985.
[6.12] PITTON Y., Etude de l’adhésion de films minces SiO x déposés sur polyéthylène téraphtalate,
thèse N° 1553, EPFL Lausanne, 1996.
[6.13] MURALT P., priv. communication, 2000.
[6.14] SUZUKI H., Coating Analysis, in Glow Discharge Optical Emission Spectroscopy, R. Payling,
D.G. Jones, and A. Bengtson, Editors, John Wiley & Sons, Chichester, pp. 723-728, 1997.