172
J. Hochhalter et al.
Fig. 2 Images on of a
urethane residual layer stamp
applied to an aluminum
oligocrystal sample imaged at
5 keV using secondary
electron imaging (a) and at
20 keV using backscattered
electrons (b)
While the general area of CP modeling and their applications is large, a focus
here is given to phenomenological models. Such models are characterized by the
consideration of the shear stress resolved on each crystallographic slip system,
τ α , and its current strength, g α , that causes plastic slip, γ α , to occur. Similarly,
the discussion is limited to CP models that represent a single phase with lattice
dislocations as the sole deformation mechanism. The objective of this section
is to provide sufficient background for CP modeling such that the subsequent
discussion of non-deterministic calibration of CP parameters can be understood.
For an encompassing review of CP modeling, see [33].
J. Hochhalter et al.
Fig. 2 Images on of a
urethane residual layer stamp
applied to an aluminum
oligocrystal sample imaged at
5 keV using secondary
electron imaging (a) and at
20 keV using backscattered
electrons (b)
While the general area of CP modeling and their applications is large, a focus
here is given to phenomenological models. Such models are characterized by the
consideration of the shear stress resolved on each crystallographic slip system,
τ α , and its current strength, g α , that causes plastic slip, γ α , to occur. Similarly,
the discussion is limited to CP models that represent a single phase with lattice
dislocations as the sole deformation mechanism. The objective of this section
is to provide sufficient background for CP modeling such that the subsequent
discussion of non-deterministic calibration of CP parameters can be understood.
For an encompassing review of CP modeling, see [33].