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Iridium
Unlike Pt and Pd, many kinds of Ir precursors are used in the thermal Ir ALD
process including
Ir(acac) 3 (acac=acetylacetone), (ethylcyclopentadienyl)(1,5-cyclooctadiene)iridium (EtCpIr(COD)), and (ethylcyclopentadienyl)(1,3cyclohexadiene)iridium (Ir(MeCp)(CHD), where the ligands are removed by O 2 at
225–400 °C with a rate of 0.02–0.08 nm/cycle [31, 32]. The highly active iridium
catalysts prepared by ALD using Ir(acac) 3 and O 2 show smaller metal particle
size and higher activity for decalin conversion and toluene hydrogenation than that
prepared by traditional wet chemistry methods [33, 34].
Rhodium
For Rh ALD, Rh(acac) 3 is the exclusive precursor, followed by O 2 combustion,
and the temperature window shows a wide range of 225–325 °C with a growth rate
of 0.05–0.19 nm per cycle [35]. To our knowledge, Rh catalyst prepared by ALD
had not been reported till Li et al. deposited Rh NPs on Al 2 O 3 used for methane
dry reforming reaction (DRM) by using Rh(acac) 3 and O 3 [36]. Compared with the
sample prepared by impregnation method, the Rh nanoparticles prepared by ALD
method exhibit a narrower size distribution. Other noble metals, such as Ru, Ag, and
Au, which have been successfully synthesized by ALD, might also be prepared as
catalysts in the future.
Non-noble metals
Besides the direct reaction between metal precursor and the reducing agent like H 2 or
NH 3 , some non-noble metal nanoparticles could be formed from the corresponding
oxides by a reduction process in H 2 flow considering their strong affinity with
oxygen. Taking Ni ALD as an example, two deposition routes are viable, including
Ni(Cp) 2 –H 2 and Ni(Cp) 2 –O 2 –H 2 [37, 38]. The Ni nanoparticles have been deposited
on alumina by using Ni(acac) 2 and air as precursors. The temperature window for Ni
ALD is in the range of 200–300 °C with a growth rate of about 0.5–1.2 nm/cycle [39,
40]. By using Ni(Cp) 2 and water as precursor in the Ni ALD process, the formation
temperature of Ni nanoparticles is lowered (under 250 °C), which is usually above
400 °C in impregnation methods [41]. Ni catalysts prepared by ALD are usually used
as hydrogenation and reforming catalysis [37, 38, 41, 42].
Cu ALD has also attracted great attention due to the variety of industrial applications, and various Cu ALD processes have been developed:
CuCl–H 2 , Cu(thd) 2 –H 2 (thd=2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(acac) 2 –
H 2 , Cu(dialkylacetamidinate) 2 –H 2, etc. [43]. In an ALD process using Cu(
s Buamd)) 2 (
s Bu-amd=N,N’-disec-butylacetamidinate) and hydrogen as precursors, the
growth rate varies from 1.5 to 2 Å/cycle on SiO 2 or Si 3 N 4 at a relative low temperature range of 150–190 °C [44]. Highly dispersed Cu catalysts prepared by ALD can
be applied in (reverse) water–gas shift reaction and photodegradation of methylene
blue and phenol [45, 46].
Co catalysts are prepared by ALD where the pulse of Co(acac) 2 and O 3 precursors
was performed at 200 and 400 °C [47]. The ALD catalysts show up to 2.3 times
higher dispersion than cubic cobalt nanoparticles. The Co catalysts prepared by
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