9 Usage of Silicon for Label-Free Super-Resolved Imaging
237
39. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, A. Alberigi-Quaranta, Electron drift velocity in
silicon. Phys. Rev. B 12(6), 2265–2284 (1975)
40. X. Wang, Z.H. Shen, J. Lu, X.W. Ni, Laser-induced damage threshold of silicon in millisecond,
nanosecond, and picosecond regimes. J. Appl. Phys. 108(3), 33103 (2010)
41. C. Jun, H.-J. Eichler, Laser beam defocusing at 1.06 gm by carrier excitation in silicon. Appl.
Phys. B 45, 121–124 (1988)
42. T. Auguste, P. Monot, L.-A. Lompr6, G. Mainfray, C. Manus, Defocusing effects of a picosecond terawatt laser pulse in an underdense plasma. Opt. Commun. 89, 145–148 (1992)
43. V.V. Kononenko, E.V. Zavedeev, V.M. Gololobov, The effect of light-induced plasma on propagation of intense fs laser radiation in c-Si. Appl. Phys. A 122 (2016)
237
39. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, A. Alberigi-Quaranta, Electron drift velocity in
silicon. Phys. Rev. B 12(6), 2265–2284 (1975)
40. X. Wang, Z.H. Shen, J. Lu, X.W. Ni, Laser-induced damage threshold of silicon in millisecond,
nanosecond, and picosecond regimes. J. Appl. Phys. 108(3), 33103 (2010)
41. C. Jun, H.-J. Eichler, Laser beam defocusing at 1.06 gm by carrier excitation in silicon. Appl.
Phys. B 45, 121–124 (1988)
42. T. Auguste, P. Monot, L.-A. Lompr6, G. Mainfray, C. Manus, Defocusing effects of a picosecond terawatt laser pulse in an underdense plasma. Opt. Commun. 89, 145–148 (1992)
43. V.V. Kononenko, E.V. Zavedeev, V.M. Gololobov, The effect of light-induced plasma on propagation of intense fs laser radiation in c-Si. Appl. Phys. A 122 (2016)